Ultrahigh energy-storage performance in lead-free BZT thin-films by tuning relaxor behavior

作者: Minh D. Nguyen

DOI: 10.1016/J.MATERRESBULL.2020.111072

关键词: OptoelectronicsThin filmNanosheetCapacitorUltrahigh energyPolarization (electrochemistry)Breakdown strengthRelaxor ferroelectricMaterials science

摘要: Relaxor ferroelectric thin films show excellent energy-storage performance for pulse-power applications. In this study, La-doped Ba 1-x La x (Zr 0.25 Ti 0.75) O 3 (BLZT, x= 0–8%) thin …

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