DC-bias dependent impedance spectroscopy of BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics

摘要: This report discusses the voltage-stability of dielectric and transport properties BaTiO3–Bi(Zn1/2Ti1/2)O3 (BT–BZT) ceramics which have shown excellent for emerging energy applications. For p-type BaTiO3, deviated from Ohm's law behavior at very low voltage levels along with a reversible drop in bulk resistivity by several orders magnitude starting bias fields as 0.1 kV cm−1 (∼8 V). In contrast, n-type BT–BZT exhibited small (i.e. less than one order magnitude) increase on application field levels. These data indicate hole-generation mechanism becomes active threshold. The capacitance values calculated using AC impedance spectroscopy, however, were relatively unaffected (<15% change) this DC (up to ∼0.25 cm−1). findings provide important insights into electric mechanisms BT-based ceramics.