Transistor structure incorporating a solid deuterium source for gate interface passivation
作者： Robert H. Eklund
DOI:
关键词: Transistor 、 Chemistry 、 Hot carrier lifetime 、 Deuterium 、 Analytical chemistry 、 Hot carrier reliability 、 Silicon nitride 、 Transistor channel 、 Passivation 、 Optoelectronics
摘要: The present invention is a method for improving transistor channel hot carrier reliability by incorporating solid deuterium source into the structure. This accomplished using containing gas formation of components A sinter, shown to improve lifetime, made more viable process step as silicon nitride. Additionally, time and/or temperature sinter may reduced. Incorporation which allow sufficient outdiffusion eliminate need final sinter.
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