Facet growth of InP/InGaAs layers on SiO2-masked InP by chemical beam epitaxy
作者： Hideo Sugiura , Toshio Nishida , Ryuzo Iga , Takeshi Yamada , Toshiaki Tamamura
DOI: 10.1016/0022-0248(92)90565-Z
关键词: Chemical beam epitaxy 、 Superlattice 、 Cathodoluminescence 、 Heterojunction 、 Chemistry 、 Crystal growth 、 Quantum wire 、 Chemical vapor deposition 、 Substrate (electronics) 、 Optics
摘要: Abstract Selective area growth of periodic InP/InGaAs heterostructure layers by chemical beam epitaxy are studied. The grown in windows ranging width from 0.1 to 5 μm under various substrate temperature and mask stripe direction conditions. Mesa-like structures bounded a (100) top surface two (111)B sidewalls selectively for InP InGaAs. An analysis the time evolution mesa cross-section areas reveals that 100% metalorganic molecules impinging on planes migrate plane facet growth, while only 40% them InGaAs growth. Cathodoluminescence measurement indicates peak wavelengths InGaAs/InP superlattice shift longer wavelength as window decreases. A 450 wide quantum wire is buried single step. simple model explaining mechanism also proposed.
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sci-hub.se 参考文章(13)
정원국, Metalorganic Vapor Phase Epitaxy 한국표면공학회 학술발표회 초록집. pp. 7- 7 ,(1990)
Ryuzo Iga, Hideo Sugiura, Takeshi Yamada, Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs Japanese Journal of Applied Physics. ,vol. 30, pp. L4- L6 ,(1991) , 10.1143/JJAP.30.L4
Hideo Sugiura, Ryuzo Iga, Takeshi Yamada, Tsuyoshi Toriyama, Selective Area Growth of InP and InGaAs Layers on SiO2-Masked Substrate by Chemical Beam Epitaxy Japanese Journal of Applied Physics. ,vol. 30, ,(1991) , 10.1143/JJAP.30.L1089
Y. D. Galeuchet, P. Roentgen, V. Graf, GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures Journal of Applied Physics. ,vol. 68, pp. 560- 568 ,(1990) , 10.1063/1.346829
H. Sugiura, R. Iga, T. Yamada, Laser-assisted chemical beam epitaxy for selective growth Journal of Crystal Growth. ,vol. 120, pp. 389- 394 ,(1992) , 10.1016/0022-0248(92)90423-G
B. Garrett, E.J. Thrush, Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates Journal of Crystal Growth. ,vol. 97, pp. 273- 284 ,(1989) , 10.1016/0022-0248(89)90208-X
O. Kayser, Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE Journal of Crystal Growth. ,vol. 107, pp. 989- 998 ,(1991) , 10.1016/0022-0248(91)90592-S
W.T. Tsang, L. Yang, M.C. Wu, Y.K. Chen, Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy Electronics Letters. ,vol. 27, pp. 3- 5 ,(1991) , 10.1049/EL:19910003
Seigo Ando, Takashi Fukui, Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires Journal of Crystal Growth. ,vol. 98, pp. 646- 652 ,(1989) , 10.1016/0022-0248(89)90301-1
Y. L. Wang, A. Feygenson, R. A. Hamm, D. Ritter, J. S. Weiner, H. Temkin, M. B. Panish, Optical and electrical properties of InP/InGaAs grown selectively on SiO2‐masked InP Applied Physics Letters. ,vol. 59, pp. 443- 445 ,(1991) , 10.1063/1.105457