作者: R. Jeremias , W. Brockherde , G. Doemens , B. Hosticka , L. Listl
DOI: 10.1109/ISSCC.2001.912627
关键词: Photodiode 、 Synchronizer 、 CMOS 、 CMOS sensor 、 Laser 、 Photodetector 、 Chip 、 Optoelectronics 、 Shutter 、 Physics
摘要: A 32×2 pixel optical time of flight range sensor in standard 0.5 μm CMOS acquires up to 20k BD-images/s combines CDS, S&H, multiple double short integration, a high-speed synchronous shutter, and phase synchronizer enabling exposures <30 ns with <5.2 W/m/sup 2/ NEP. This imager chip for 3D imaging applications contains photodiode array the aforementioned features enable TOF measurements laser pulses reflected from target. The 42 mm/sup dissipates 330 mW.