Temperature dependence of the barrier height of Pt/n-GaAs Schottky diodes
作者： H.-W. Hübers , H. P. Röser
DOI: 10.1063/1.368781
关键词: Schottky barrier 、 Diode 、 Condensed matter physics 、 Schottky diode 、 Schottky effect 、 Band gap 、 Fermi level 、 Metal–semiconductor junction 、 Temperature coefficient 、 Chemistry
摘要: The dependence on temperature of the Schottky barrier height Pt n-GaAs is reported. Two different behaviors are observed. contacts one group have a mean 1.018 eV and coefficient −0.23 meV/K while other significantly lower 0.922 which almost independent temperature. These results interpreted basis recent models Fermi level pinning. While in diodes first pinned to charge neutrality level, it by defects second group.
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