Monte Carlo Solution of High Electric Field Hole Transport Processes in Avalanche Amorphous Selenium

作者: Dragica Vasileska , Amir H. Goldan , Atreyo Mukherjee , John Akis

DOI: 10.1021/ACSOMEGA.0C04922

关键词: Electric fieldPhononPhysicsDensity of statesScatteringMonte Carlo methodImpact ionizationBoltzmann equationCondensed matter physicsRelaxation (physics)

摘要: Amorphous selenium lacks the structural long-range order present in crystalline solids. However, stark similarity short-range that exists across its allotropic forms, augmented with a shift to non-activated extended-state transport at high electric fields beyond onset of impact ionization, allowed us perform this theoretical study, which describes high-field hole processes amorphous by modeling band-transport lattice theory counterpart trigonal selenium. An in-house bulk Monte Carlo algorithm is employed solve semiclassical Boltzmann equation, providing microscopic insight carrier trajectories and relaxation dynamics these non-equilibrium "hot" holes extended states. The hole-phonon interaction lack phase modeled as individual scattering processes, namely acoustic, polar non-polar optical phonons, disorder dipole scattering, ionization gain, using power law Keldysh fit. We have used non-parabolic approximation density functional calculated valence band To validate our model, we calculate compare time flight mobility, ensemble energy velocity, field distributions experimental findings. reached conclusion hot drift around direction perpendicular applied are subject frequent acceleration/deceleration caused presence phonon, disorder, impurity scattering. This leads certain determinism otherwise stochastic phenomenon, usually seen elemental

参考文章(67)
Karl Hess, Monte Carlo Device Simulation: Full Band and Beyond Kluwer Academic Publishers. ,(1991)
Gerhard Klimeck, Dragica Vasileska, Stephen M. Goodnick, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation ,(2010)
R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, M. Razeghi, Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes Applied Physics Letters. ,vol. 90, pp. 141112- ,(2007) , 10.1063/1.2720712
J. Mort, Acoustoelectric Current Saturation in Trigonal Selenium Physical Review Letters. ,vol. 18, pp. 540- 543 ,(1967) , 10.1103/PHYSREVLETT.18.540
Wug-Dong Park, Kenkichi Tanioka, Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film Applied Physics Letters. ,vol. 105, pp. 192106- ,(2014) , 10.1063/1.4902011
Mark Lundstrom, Fundamentals of Carrier Transport, 2nd edn Measurement Science and Technology. ,vol. 13, pp. 230- 230 ,(2002) , 10.1088/0957-0233/13/2/703
Wug Dong Park, Kenkichi Tanioka, Drift Velocity of Hot Carriers in a-Se Photoconductive Target Advanced Materials Research. ,vol. 787, pp. 337- 340 ,(2013) , 10.4028/WWW.SCIENTIFIC.NET/AMR.787.337
S.A. Plimmer, J.P.R. David, R. Grey, G.J. Rees, Avalanche multiplication in Al/sub x/Ga/sub 1-x/As (x=0 to 0.60) IEEE Transactions on Electron Devices. ,vol. 47, pp. 1089- 1097 ,(2000) , 10.1109/16.841245
N.J. Shevchick, J. Tejeda, M. Cardona, D.W. Langer, Valence band density of states of amorphous and trigonal selenium determined by X-ray and U.V. photoemission Solid State Communications. ,vol. 12, pp. 1285- 1288 ,(1973) , 10.1016/0038-1098(73)90866-1