Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor.
作者： Su Jeong Lee , Jieun Ko , Ki-Ho Nam , Taehee Kim , Sang Hoon Lee
关键词: Optoelectronics 、 Oxide thin-film transistor 、 Layer (electronics) 、 Low voltage 、 Transistor 、 Fabrication 、 Solution process 、 Transmittance 、 Thin-film transistor 、 Materials science
摘要: Flexible and foldable thin-film transistors (TFTs) have been widely studied with the objective of achieving high-performance low-cost flexible TFTs for next-generation displays. In this study, we introduced fabrication TFT devices excellent mechanical stability, high transparency, performance by a fully solution process including PI, YOx, In2O3, SWCNTs, IL-PVP, Ag NWs. The fabricated solution-processed showed higher transmittance above 86% in visible range. Additionally, charge-carrier mobility Ion/Ioff ratio them were 7.12 ± 0.43 cm2/V·s 5.53 0.82 × 105 at 3 V low voltage operating, respectively. particular, good electrical characteristics under tensile strain 1 mm bending even extreme folding up to 26.79%. Due compatibility each component layer, it maintained over 79% initial after 5,000 cycles test ...
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