Leading edge blanking circuit
作者： Eric W. Tisinger
DOI:
关键词: Engineering 、 Overdrive voltage 、 Blanking 、 Leading edge 、 Voltage 、 Transistor 、 Drain-induced barrier lowering 、 Electrical engineering 、 Threshold voltage 、 Sense (electronics)
摘要: A leading edge blanking circuit has been provided. The LEB (20) includes a minimum number of components for monitoring gate voltage transistor (28) and passing current sense signal, which senses the level through transistor, to subsequent control circuitry (32) when exceeds predetermined threshold (VLEBTH). Further, is chosen be between Miller plateau desired maximum voltage.
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