Charge collection and SEU from angled ion strikes
作者： P.E. Dodd , M.R. Shaneyfelt , F.W. Sexton
DOI: 10.1109/23.659044
关键词: Single event upset 、 Transistor 、 Diode 、 Computational physics 、 Upset 、 Charge (physics) 、 CMOS 、 Electrical engineering 、 Engineering 、 Charged particle 、 Ion
摘要: Charge collection and SEU from angled ion strikes are studied using three-dimensional simulation. The physics of charge in unloaded diodes transistors is explored, as the angular dependence upset threshold CMOS SRAMs. simulation results compared to analytical models for collection. Modeling fundamental transport SRAMs, true effective LET relationship computed used analyze experimental heavy-ion data. Impacts on test methodology discussed.
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