Growth of EuTe islands on SnTe by molecular beam epitaxy
作者： B Diaz , A Malachias , PHO Rappl , E Abramof , Valmir Antonio Chitta
DOI: 10.1016/J.JCRYSGRO.2010.06.022
关键词: Quantum dot 、 Wide-bandgap semiconductor 、 Electron diffraction 、 Chemistry 、 Reflection high-energy electron diffraction 、 Lattice constant 、 Molecular beam epitaxy 、 Narrow-gap semiconductor 、 Semiconductor 、 Condensed matter physics
摘要: Semiconductor magnetic quantum dots are very promising structures, with novel properties that find multiple applications in spintronic devices. EuTe is a wide gap semiconductor with …
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