Photo-induced structural and physico-chemical changes in amorphous chalcogenide semiconductors
作者： A. E. Owen , A. P. Firth , P. J. S. Ewen
DOI: 10.1080/13642818508240606
关键词: Raman spectroscopy 、 Chemical physics 、 Amorphous solid 、 Layer (electronics) 、 Chalcogenide 、 Materials science 、 Chalcogenide glass 、 Semiconductor 、 Mineralogy
摘要: Abstract The various photo-induced phenomena that occur in chalcogenide glasses are classified and described, with particular emphasis on the photo-dissolution effect. detailed mechanisms responsible for many of these processes still unknown, although case photo-darkening annealed a-As2S3 films, Raman experiments indicate a light-induced change bond distribution from chemically-ordered network towards one characteristic random may be principal cause. New results silver into As-S films presented which actinic radiation initiating effect is absorbed photo-doped layer, close to interface undoped region film. basic mechanism effect, however, not known.
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