Electrical properties and injection luminescence in ZnSe‐ZnTe heterojunctions prepared by liquid‐phase epitaxy

摘要: The electrical properties and the injection electroluminescence in ZnSe‐ZnTe n‐p heterojunctions prepared by liquid‐phase epitaxial growth from Zn or Bi solution have been studied. consist of a p‐s‐n structure with distributed trap centers at boundary region. heterodiodes show an emission band peaking about 1.94–2.04 eV room temperature. At 77 K, spectra generally four bands 1.98, 2.32, 2.70, 2.78 eV. dominance any one these over others depends upon preparation conditions. photoluminescence measurements that light generation heterodiode occurs ZnSe branch junction: through hole p‐type ZnTe into n‐type ZnSe. best value for external quantum efficiency measured integrating sphere method is 4×10−3 photons per electron K. relation between luminescence characteristics discussed tentative models.