Fabrication and actuation of customized nanotweezers with a 25 nm gap

摘要: By combining conventional silicon microfabrication and direct three-dimensional growth using electron-beam induced carbon contamination, we have developed a scheme for fabricating nanotweezers with gap of 25 nm. Four oxide cantilevers spacing of 1.5 µm extending over an edge of support chip, were covered thin layer metal. focusing electron beam at the ends cantilevers, narrow supertips grew from substrate. Careful alignment substrate made converge to form nanoscale gap. We demonstrate customization shape size tweezer arms, simple that allows conveniently fine-tuning tip features within 5 nm. The can be metallized subsequently, conducting, without significantly affecting tweezers. applying voltage on outer electrodes respect inner two electrodes, opened closed. This enables device grab manipulate small particles, option electrical measurement particle. advantage our approach is no difference applied between making ideal application such fragile structures as organic objects.