Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer
作者： Lichun Zhang , Qingshan Li , Liang Shang , Feifei Wang , Chong Qu
DOI: 10.1364/OE.21.016578
关键词: Diode 、 Optoelectronics 、 Pulsed laser deposition 、 Materials science 、 Band diagram 、 Chemical vapor deposition 、 Optics 、 Ultraviolet 、 Electroluminescence 、 Heterojunction 、 Light-emitting diode
摘要: n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the display a broad blue-violet emission centered at 430 nm, whereas n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared AlN interlayer, which is blocking both electron hole hetero-interface, utilization ZnS as intermediate layer can lower barrier height for holes keep an effective electron. Thus, improved UV EL intensity low turn-on voltage (~5V) obtained. results studied peak-deconvolution Gaussian functions discussed using band diagram heterojunctions.
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