Fabricating porous silicon carbide

摘要: The formation of porous SiC occurs under electrochemical anodization. A sample is contacted electrically with nickel and placed into an cell which includes a counter electrode reference electrode. encapsulated so that only bare semiconductor surface exposed. filled HF electrolyte dissolves the electrochemically. potential applied to UV light illuminates semiconductor. By controlling intensity, doping level, layer formed in thus one produces SiC.