Sintering of Silicon Carbide
作者： Hidehiko Tanaka
DOI: 10.1007/978-94-011-3842-0_10
关键词: Mass transport 、 Refractory 、 Silicon carbide 、 Sintering atmosphere 、 Materials science 、 Work (thermodynamics) 、 Metallurgy 、 Sintering
摘要: Sintering behavior and sintering techniques of silicon carbide are reviewed. Work on experiments with containing B-C Al-B-C is referred to. First, the driving energy sintering, non-sinterability powder, role additives explained by free theory mass transport. Second, reported. In case addition, it emphasized that optimization added B content, atmosphere heating rate important factors controlling density sintered SiC. Sinterability Al-doped SiC powder addition Al2O3, Al-C, other compounds summarized.
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