Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon
作者： Kuan-Kan Hu , Shin-Yang Liang , Wei Yen Woon
关键词: Impurity 、 Strain (chemistry) 、 Phase (matter) 、 Diffraction 、 Epitaxy 、 Condensed matter physics 、 Dopant 、 Silicon 、 Crystallography 、 Ion 、 Materials science 、 General Engineering 、 General Physics and Astronomy
摘要: Solid-phase-epitaxial-regrowth (SPER) dynamics of ion-implanted silicon were studied through in situ time-resolved reflectivity measurements. The roles strain induced by dopant and isovalent impurities with different atomic sizes disentangled considering the actual Fermi-level shifting effective partial impurities, as obtained from Hall measurements high-resolution X-ray diffraction. Contrary to previous model, SPER rate retardation was found cases both isovalent-impurity-induced tensile compressive strain. We propose a modified model incorporating into generalized inclusively explain dynamics.
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