Super junction trench power MOSFET device fabrication
作者： Kyle Terrill , Sharon Shi , The-Tu Chau , Qufei Chen , Kuo-In Chen
DOI:
关键词: Electrical engineering 、 Fabrication 、 Optoelectronics 、 Trench 、 Oxide semiconductor 、 Materials science 、 Field-effect transistor 、 Oxide 、 Column (database) 、 Power MOSFET 、 Dopant
摘要: Methods of fabricating a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device are described. A column p- type dopant in the is separated from first n-type by and second oxide. In an n-channel device, gate element for FET advantageously situated over p-type dopant; p-channel dopant.
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