Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode
作者： D.G. Deppe , J.C. Campbell , R. Kuchibhotla , T.J. Rogers , B.G. Streetman
DOI: 10.1049/EL:19901066
关键词: Interference (wave propagation) 、 Semiconductor 、 Optics 、 Frequency response 、 Light-emitting diode 、 Spontaneous emission 、 Optoelectronics 、 Physics 、 Molecular beam epitaxy 、 Quantum well 、 Gallium arsenide
摘要: Data are presented showing that it is possible to optically couple a semiconductor quantum well mirror, and thus influence its spontaneous emission lifetime, for mirror spacings of less than an optical wavelength. Light emitting diodes with various corresponding placement at either interference nodes or antinodes characterised in terms light output efficiency frequency response.
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