Different regimes of Förster-type energy transfer between an epitaxial quantum well and a proximal monolayer of semiconductor nanocrystals

摘要: We calculate the rate of nonradiative, F\"orster-type energy transfer (ET) from an excited epitaxial quantum well (QW) to a proximal monolayer semiconductor nanocrystal dots (QDs). Different electron-hole configurations in QW are considered as function temperature and density. A comparison theoretically determined ET radiative recombination shows that, depending on specific conditions, is comparable or even greater than rate. Such efficient F\"orster promising for implementation ET-pumped, QD-based light emitting devices.