Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon
作者： T-TD Tran , R Chen , KW Ng , WS Ko , F Lu
DOI: 10.1063/1.4895920
关键词: Silicon 、 Lasing threshold 、 Optoelectronics 、 Crystalline silicon 、 Nanoneedle 、 Materials science 、 Optical pumping 、 Whispering-gallery wave 、 Semiconductor laser theory 、 Laser
摘要: As-grown InGaAs nanoneedle lasers, synthesized at complementary metal–oxide–semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes observed upon optically pumping the needles above lasing threshold. Using radiation as well finite-difference-time-domain simulations polarization measurements, all modal numbers could be identified.
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