Strong visible photoluminescence in amorphous SiOx and SiOx:H thin films prepared by thermal evaporation of SiO powder
作者： H Rinnert , M Vergnat , G Marchal , A Burneau
DOI: 10.1016/S0022-2313(98)00145-8
关键词: Infrared spectroscopy 、 Raman spectroscopy 、 Silicon 、 Chemical engineering 、 Hydrogen 、 Passivation 、 Photoluminescence 、 Infrared 、 Amorphous solid 、 Chemistry
摘要: Abstract Amorphous SiOx and SiOx : H films were prepared by thermal evaporation of SiO powder in ultrahigh vacuum or under a flow hydrogen ions onto silicon substrates maintained at 100°C. Photoluminescence (PL) can be seen the visible range with naked eye on as-deposited samples without post-treatments. Composition structure investigations performed infrared Raman spectrometry experiments annealed different temperatures. Hydrogen oxygen bonding was studied spectrometry. The PL is attributed to quantum confinement excitons a-Si clusters embedded a-SiOx matrix. Our results demonstrate that creates an efficient potential barrier no further passivation necessary.
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