作者: R. T. F. van Schaijk , A. de Visser , S. M. Olsthoorn , H. P. Wei , A. M. M. Pruisken
DOI: 10.1103/PHYSREVLETT.84.1567
关键词: Critical exponent 、 Heterojunction 、 Low mobility 、 Insulator (electricity) 、 Conductance 、 Renormalization group 、 Physics 、 Quantum Hall effect 、 Quantum phase transition 、 Condensed matter physics
摘要: We report quantum Hall experiments on the plateau-insulator transition in a low mobility $In_{.53}$ $Ga_{.47}$ $As/InP$ heterostructure. The data for longitudinal resistance $\rho_{xx}$ follow an exponential law and we extract critical exponent $\kappa= .55 \pm .05$ which is slightly different from established value $\kappa = .42 .04$ plateau transitions. Upon correction inhomogeneity effects, cause conductance $\sigma_{xx}^*$ to depend marginally temperature, our indicate that plateau-plateau plateau- insulator transitions are same universality class.