Combined influence of fluorine doping and vacuum annealing on the electrical properties of ZnO:Ta films

摘要: Abstract In this study, our main focus is to investigate the effects of F doping and post deposition annealing (air vacuum) on optical electrical characteristics tantalum doped zinc oxide films (ZnO:Ta). A cost-effective, automated jet nebulizer spray pyrolysis technique adopted deposit ZnO:Ta:F films. The level Ta kept constant (1 at.%) that varied from 5 20 at.% in steps at.%. resistivity as-deposited decreases for 10 concentration. resistance increases thereafter. same trend also observed annealed reasons these variations are addressed based effective incorporation into ZnO lattice atmosphere with help XRD, FESEM, AFM PL studies. dopants was confirmed XPS EDX analyses DFT studies show does not affect stability lattice. Vacuum-annealed better properties over air-annealed counterparts, though their transparency affected marginally. minimum 0.81 × 10 −3  Ω cm an enhanced quality factor 2.265 × 10 −4  (Ω/sq) −1 achieved vacuum-annealed having Ta + F levels as 1 + 10 These results make sample a desirable candidate transparent electrode applications.