Impact of Carbon Doping on Polysilicon Grain Size Distribution and Yield Enhancement for 40-nm Embedded Nonvolatile Memory Technology
作者： Laiqiang Luo , Kalya Shubhakar , Sen Mei , Nagarajan Raghavan , Binghai Liu
DOI: 10.1109/TDMR.2017.2787908
关键词: Particle-size distribution 、 Materials science 、 Optoelectronics 、 Annealing (metallurgy) 、 Transistor 、 Non-volatile memory 、 Grain growth 、 Silicon 、 Grain size 、 Static random-access memory
摘要: Polysilicon (poly-Si) grain size control is a critical issue with scaling of MOS transistors in integrated-circuit design, more so embedded nonvolatile memory (NVM) technology. This paper investigates an approach to suppress poly-Si growth under necessary additional thermal budget for 40-nm NVM Our studies reveal that carbon implant can and the dose rather than its energy plays key role controlling size. Physical analysis using advanced planar transmission electron microscopy technique shows reduction increasing dose. The application sub-40 nm technology therefore help reduce SRAM ${V} _{{MIN}}$ -related failures significantly. In this paper, we present complete process reliability case study incorporate as effective solution suppressing growth, thereby eliminating side effects NVM.
sci-hub.se 参考文章(16)
C. L. Cha, E. F. Chor, Y. M. Jia, A. J. Bourdillon, H. Gong, J. S. Pan, A. Q. Zhang, S. K. Tang, C. B. Boothroyd, Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors Journal of Materials Science Letters. ,vol. 18, pp. 1427- 1431 ,(1999) , 10.1023/A:1006679625601
T.A. Carbone, P. Plourde, E. Karagiannis, Correlation of ellipsometric volume fraction to polysilicon grain size from transmission electron microscopy advanced semiconductor manufacturing conference. pp. 359- 367 ,(1999) , 10.1109/ASMC.1999.798265
Jean-Michel Sallese, Matthias Bucher, Christophe Lallement, Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation Solid-state Electronics. ,vol. 44, pp. 905- 912 ,(2000) , 10.1016/S0038-1101(00)00023-X
J.K.N. Lindner, High-dose carbon implantations into silicon: fundamental studies for new technological tricks Applied Physics A. ,vol. 77, pp. 27- 38 ,(2003) , 10.1007/S00339-002-2062-8
L. Asinovsky, S. Fox, E. Karagiannis, M. Schroth, J.J. Sweeney, Characterization of Low Pressure Chemical Vapor Deposited Polysilicon Using Ellipsometry Solid State Phenomena. pp. 179- 186 ,(1996) , 10.4028/WWW.SCIENTIFIC.NET/SSP.51-52.179
J. Akhtar, S.K. Lamichhane, P. Sen, Thermal-induced normal grain growth mechanism in LPCVD polysilicon film Materials Science in Semiconductor Processing. ,vol. 8, pp. 476- 482 ,(2005) , 10.1016/J.MSSP.2004.10.003
Ibrahim Ahmad, Abdullah Omar, Aini Hussain, Anuar Mikdad, Characterisation of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy images Applied Surface Science. ,vol. 191, pp. 362- 367 ,(2002) , 10.1016/S0169-4332(02)00226-X
S. Boultadakis, S. Logothetidis, S. Ves, Comparative study of thin poly‐Si films grown by ion implantation and annealing with spectroscopic ellipsometry, Raman spectroscopy, and electron microscopy Journal of Applied Physics. ,vol. 72, pp. 3648- 3658 ,(1992) , 10.1063/1.352308
J-P Carrere, F. Larman, E. van der Vegt, M. Bocat, N. Auriac, N. Cherault, M. Charleux, K. Rochereau, M. Hopstaken, R. Pantel, D. Boter, D. Dormans, Embedded FLASH memory thermal budget impact on core CMOS 90nm devices european solid state device research conference. pp. 263- 266 ,(2007) , 10.1109/ESSDERC.2007.4430928
H. Puchner, S. Selberherr, An advanced model for dopant diffusion in polysilicon IEEE Transactions on Electron Devices. ,vol. 42, pp. 1750- 1755 ,(1995) , 10.1109/16.464423