作者: Li Xue , Bin Xu , Degang Zhao , Lin Yi
DOI: 10.1016/J.INTERMET.2014.08.005
关键词: Doping 、 Electronic structure 、 Thermoelectric effect 、 Computational chemistry 、 Density of states 、 Thermoelectric materials 、 Semiconductor 、 Materials science 、 Condensed matter physics 、 First principle 、 Edge (geometry)
摘要: Abstract To improve the performance of a thermoelectric material CuGaTe 2 , element Ag is doped to replace Ga and we investigate electronic structure, phase stability, elastic properties CuGa 1− x Te ( = 0, 0.25 0.5) via first-principles method. The stability discussed by analyzing formation energy, cohesive energy constants. calculated sound velocities decrease with increase content, which favorable for reducing lattice thermal conductivity. analysis band structures shows that replacement makes undergo direct-indirect semiconductor transition. doping induces steep density states in valence edge, beneficial increasing carrier concentration improving .