MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要: PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method with few of masking steps. SOLUTION: N films 54, 56 and silicon oxide film 50 beneath the are masked, polysilicon layer 48 is implanted high concn. P ions at low implanting energy energy. Accordingly, gate electrode 66 MOS field effect transistor T ions, resistance conductor part 64 element R lower 62 capacitor C only. The 54 an O 58 (silicon 50) used as mask for utilized forming dielectric C. Thus step contacting can be omitted.