Organic Phototransistors With All-Polymer Bulk Heterojunction Layers of p -Type and n -Type Sulfur-Containing Conjugated Polymers

作者: Hyemi Han , Sungho Nam , Jooyeok Seo , Jaehoon Jeong , Hwajeong Kim

DOI: 10.1109/JSTQE.2015.2447538

关键词: Light intensityConjugated systemPolymerMaterials scienceSense (electronics)Visible spectrumPolymer solar cellElectrodeResponsivityOptoelectronics

摘要: All-polymer phototransistors were fabricated using both glass and flexible plastic film substrates by employing bulk heterojunction channel layers of p-type polymer (P3HT) n-type (THBT-ht). The devices could detect the entire visible light because sense photons in deep red parts (>650 nm). responsivity was higher at lower intensity, while it be controlled varying gate and/or drain voltages. Similar performances measured for all-polymer with a bottom-source/drain top-gate electrode configuration.

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