作者: Henry I. Smith , Dale C. Flanders
DOI:
关键词: Radiation 、 Optics 、 Photoresist 、 Layer (electronics) 、 Photomask 、 Silicon 、 Wavelength 、 Resist 、 Materials science 、 Substrate (electronics)
摘要: Soft carbon-K X-rays (38) expose a PMMA photoresist (31) on an oxide layer (32) of silicon substrate (33) through parent mask (30) separated distance S from the resist by spacer (34) with slits (12, 17) defining spatial period p to establish intensity pattern p/n at photomask S=p 2 /nλ, where λ is wavelength incident radiation and λ