Etchant gas composition
作者： Kei-Yu Ko
DOI:
关键词: Nanotechnology 、 Oxide 、 Integrated circuit 、 Nitride 、 Gas composition 、 Chemical engineering 、 Substrate (electronics) 、 Materials science 、 Etching (microfabrication) 、 Layer (electronics) 、 Photoresist
摘要: Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field regions. The processes exhibit good selectivity to both nitrides oxides. Integrated circuits produced utilizing the present invention are much less likely be defective due photoresist mask misalignment. Etchants used in comprise carrier gas, one more C2+F gases, CH2F2, gas selected from group consisting CHF3, CF4, mixtures thereof. can performed at power levels lower than what is currently utilized prior art.
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