Etching method for etching a semiconductor substrate having a silicide layer and a polysilicon layer

作者： Hidenobu Miyamoto

DOI:

关键词: Plasma etching 、 Silicide 、 Coolant 、 Electronic engineering 、 Polysilicon depletion effect 、 Layer (electronics) 、 Etching (microfabrication) 、 Materials science 、 Electrode 、 Optoelectronics

摘要: During etching of semiconductor substrate having a polysilicon layer and silicide on the by plasma to produce processed patterned layer, is located supporting electrode. The temperature electrode controlled predetermined temperature. may be, for example, 0° C. etched into etching. placed in closer contact with A coolant gas then supplied order cool substrate.