Investigation of Solid State Reactions of Pd Films on Single-Crystal 6H-SiC
作者： E. Njoroge , J.T. Kabini , M. Mlambo , T. Ntsoane , T. Hlatshwayo
关键词: Annealing (metallurgy) 、 Materials science 、 Raman spectroscopy 、 Rutherford backscattering spectrometry 、 Single crystal 、 Silicide 、 Scanning electron microscope 、 Graphite 、 Inert 、 Analytical chemistry
摘要: The solid state reactions between Pd films deposited by resistive evaporation on 6H-SiC substrates have been investigated Rutherford backscattering spectrometry (RBS) scanning electron microscopy (SEM), Raman spectroscopy and glancing-incidence xray diffraction (GIXRD). were subsequently annealed from 200 to 800°C in vacuum. At room temperature, no silicides detected formed at the Pd/SiC interface. as-deposited a flat chemically inert interface with SiC. After annealing 400°C, reaction zone was 6H-SiC. initial phase form Pd-SiC samples Pd4Si Pd3Si. 600°C, contact structure consists of unreacted Pd, Pd3Si carbon. During 700°C 800 °C, film had completely reacted SiC resulting consisting Pd2Si C graphite state. analysis vacuum 700 °C showed clear D G carbon peaks which evidence formation surface samples.
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