Method of forming a via-hole having a desired slope in a photoresist masked composite insulating layer
作者： Bernard Auda
DOI:
关键词: Dry etching 、 Materials science 、 Composite material 、 Plasma 、 Analytical chemistry 、 Fluorine 、 Composite number 、 Range (particle radiation) 、 Layer (electronics) 、 Photoresist 、 Silicate glass
摘要: In a dry etching equipment, variable gas mixture composition provides etch and ash simultaneously. For example, when SiO 2 /phospho silicate glass composite insulating layer with respective thickness of about 300 600 nm masked by patterned photoresist is to be etched, CHF 3 /O may used the following steps: 1. Dry in an RIE equipment plasma action containing fluorine compound oxidizer percentage 10-20% form tapered hole having desired slope top PSG layer; 2. 1-8% transfer from bottom layer, wherein during this step has been modified; then 3. said 80-100% adjust slope. Therefore method comprised reduced number operations. addition, because process only based on different flow ratios, no pumping necessary, therefore results higher throughputs. The resulting via-hole 55-65 deg. range.
lens.org 参考文章(11)
Carl William Almgren, Slope etch of polyimide ,(1984)
Mary E. Musser, Process for etching tapered vias in silicon dioxide ,(1982)
Richard Joseph Saia, Method for tapered dry etching ,(1985)
Kuo-Hua Lee, Samuel Efrain Polanco, Integrated circuits having stepped dielectric regions ,(1987)
David Nin-Kou Wang, Dan Maydan, Frank D. Egitto, Materials and methods for plasma etching of oxides and nitrides of silicon ,(1982)
C. I. H. Ashby, R. M. Biefeld, Composition‐selective photochemical etching of compound semiconductors Applied Physics Letters. ,vol. 47, pp. 62- 63 ,(1985) , 10.1063/1.96405
C. I. H. Ashby, Doping level selective photochemical dry etching of GaAs Applied Physics Letters. ,vol. 46, pp. 752- 754 ,(1985) , 10.1063/1.95496
Nicholas Pasch, Method for forming an electrical contact in an integrated circuit ,(1985)
Haruhiko Abe, Process for preparing semiconductor ,(1973)