Atomistic simulation of free transverse vibration of graphene, hexagonal SiC, and BN nanosheets
作者： Danh-Truong Nguyen , Minh-Quy Le , Thanh-Lam Bui , Hai-Le Bui
DOI: 10.1007/S10409-016-0613-Z
关键词: Transverse vibration 、 Composite material 、 Boron nitride 、 Graphene 、 Finite element method 、 Boundary value problem 、 Molecular dynamics 、 Materials science 、 Silicon carbide 、 Hexagonal crystal system
摘要: Free transverse vibration of monolayer graphene, boron nitride (BN), and silicon carbide (SiC) sheets is investigated by using molecular dynamics finite element method. Eigenfrequencies eigenmodes these three in rectangular shape are studied with different aspect ratios respect to various boundary conditions. It found that conditions affect a similar way on natural frequencies BN, SiC sheets. Natural all modes decrease an increase the sheet’s size. Graphene exhibits highest frequencies, sheet possesses lowest ones. Missing atoms have minor effects this study.
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