Numerical analysis of heterostructure semiconductor devices
作者： M.S. Lundstrom , R.J. Schuelke
关键词: Quantum heterostructure 、 Field-effect transistor 、 Bipolar junction transistor 、 Materials science 、 Transistor 、 Optoelectronics 、 Semiconductor device 、 Heterojunction 、 Heterojunction bipolar transistor 、 Doping
摘要: A numerical method for analyzing heterostructure semiconductor devices is described. The macroscopic equations materials with position-dependent dielectric constant, bandgap, and densities-of-states are first cast into a form identical to that commonly used model heavily doped semiconductors. Fermi-Dirac statistics also included within this simple, Boltzmann-like formulation. Because of the similarity in formulation employed semiconductors, well-developed techniques can be directly applied simulation. simple one-dimensional, finite difference solution presented. accuracy assessed by comparing results special-case, analytical solutions. Finally, we apply simulation two devices: bipolar transistor (HBT) modulation field-effect transistor. influence conduction band spike on current-voltage characteristics HBT emitter-base junction studied, variation gate bias two-dimensional electron gas device investigated.
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