作者: R. J. Highmore
DOI: 10.1080/13642819008215247
关键词: Layer (electronics) 、 Crystallography 、 Amorphous metal 、 Intermetallic 、 Chemical physics 、 Nucleation 、 Phase (matter) 、 Amorphous solid 、 Diffusion 、 Materials science 、 Solid-state
摘要: Abstract There are two important nucleation problems in solid state amorphization. One is to understand how an amorphous phase forms at interface between crystalline elements; the other explain of a compound advancing alloy and element suppressed until layer has attained temperature- system-dependent critical thickness. This article discusses both issues. It also examines relationship transient competitive growth models for suppression thin-film diffusion couples. A transient-nucleation model used represent information about transition from growing intermetallic on kinds map: one thickness against temperature, temperature anneal time. The discussion concentrates upon most-studied amorphizing system, Ni-Zr, though points made may be relevant interpreting s...