Solid phase epitaxial regrowth of ion beam-amorphized α-quartz
作者： F. Roccaforte , W. Bolse , K. P. Lieb
DOI: 10.1063/1.122159
关键词: Irradiation 、 Rutherford backscattering spectrometry 、 Analytical chemistry 、 Amorphous solid 、 Ion beam 、 Ion 、 Epitaxy 、 Annealing (metallurgy) 、 Recrystallization (metallurgy) 、 Materials science
摘要: Solid phase epitaxial growth of ion beam-amorphized α-quartz has been studied by means Rutherford backscattering spectrometry in channeling geometry. single crystals were irradiated with Cs+ and Xe+ ions annealed air or vacuum at 500–900 °C. Complete regrowth observed the Cs-irradiated samples, after 875 °C annealing air. On other hand, provided only incomplete amorphous layer, while Xe-irradiated could not be regrown up to 900 °C. The behavior Cs recrystallization process is discussed terms SiO2-network topology.
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