作者: E. Hauser , J. Tauc , J.J. Hauser
DOI: 10.1016/0038-1098(79)90472-1
关键词: Analytical chemistry 、 Argon 、 Materials science 、 Absorption (electromagnetic radiation) 、 Absorption edge 、 Amorphous silicon 、 Extended X-ray absorption fine structure 、 Amorphous solid 、 Infrared spectroscopy 、 Getter
摘要: Abstract We determined the optical constants below absorption edge of amorphous films Si 1− x Au ( between 0.07 and 0.30) prepared by getter sputtering in argon. In range 0.15 to 0.5 eV we found that increased with increasing content could be described Mott's formula for a.c. conductivity σ(ω) ≈ ω 2 [In I 0 /ω)] 4 ≃ 4.5 at = 0.11 3.8 0.29; 10–100 K it changed only slightly temperature. The is interpreted as due direct transitions involving atoms.