Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
作者： A. F. Wright
DOI: 10.1063/1.366114
关键词: Materials science 、 Computational chemistry 、 Thin film 、 Elasticity (economics) 、 Epitaxy 、 Wurtzite crystal structure 、 Hydrostatic pressure 、 Density functional theory 、 Ab initio 、 Ab initio quantum chemistry methods 、 Condensed matter physics
摘要: … and our wurtzite results are 51 GPa for AlN, 8 GPa for GaN, and 21 GPa for InN. The ordering of these differences suggests that wurtzite GaN is most similar to zinc-blende GaN, AlN is …
scitation.org
osti.gov
aip.org
sci-hub.se 参考文章(28)
Alan F. Wright, J. S. Nelson, Explicit treatment of the gallium 3delectrons in GaN using the plane-wave pseudopotential method Physical Review B. ,vol. 50, pp. 2159- 2165 ,(1994) , 10.1103/PHYSREVB.50.2159
Masaki Ueno, Minoru Yoshida, Akifumi Onodera, Osamu Shimomura, Kenichi Takemura, Stability of the wurtzite-type structure under high pressure: GaN and InN Physical Review B. ,vol. 49, pp. 14- 21 ,(1994) , 10.1103/PHYSREVB.49.14
O. Brafman, G. Lengyel, S.S. Mitra, P.J. Gielisse, J.N. Plendl, L.C. Mansur, Raman spectra of AℓN, cubic BN and BP Solid State Communications. ,vol. 6, pp. 523- 526 ,(1968) , 10.1016/0038-1098(68)90503-6
Bernard Gil, Olivier Briot, Roger-Louis Aulombard, Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry Physical Review B. ,vol. 52, pp. 17028- 17031 ,(1995) , 10.1103/PHYSREVB.52.R17028
N. E. Christensen, I. Gorczyca, Calculated structural phase transitions of aluminum nitride under pressure. Physical Review B. ,vol. 47, pp. 4307- 4314 ,(1993) , 10.1103/PHYSREVB.47.4307
Kwiseon Kim, Walter R. L. Lambrecht, Benjamin Segall, ELECTRONIC STRUCTURE OF GAN WITH STRAIN AND PHONON DISTORTIONS Physical Review B. ,vol. 50, pp. 1502- 1505 ,(1994) , 10.1103/PHYSREVB.50.1502
A. S. Barker, M. Ilegems, Infrared Lattice Vibrations and Free-Electron Dispersion in GaN Physical Review B. ,vol. 7, pp. 743- 750 ,(1973) , 10.1103/PHYSREVB.7.743
K. Kusunoki, Volume-expansion-induced lattice instability and solid-state amorphization Physical Review B. ,vol. 53, pp. 16- 19 ,(1996) , 10.1103/PHYSREVB.53.16
Eliseo Ruiz, Santiago Alvarez, Pere Alemany, Electronic structure and properties of AlN. Physical Review B. ,vol. 49, pp. 7115- 7123 ,(1994) , 10.1103/PHYSREVB.49.7115
Kouji Hayashi, Kenji Itoh, Nobuhiko Sawaki, Isamu Akasaki, None, Raman scattering in AlxGa1−xN alloys Solid State Communications. ,vol. 77, pp. 115- 118 ,(1991) , 10.1016/0038-1098(91)90869-W