Electron emission yield of induced photoemission effect in thin ITO layers

摘要: Abstract The work contains results of investigation on the phenomena field induced electron emission and photoemission in thin doped oxide layers (10 to 200 nm) In2O3 SnO2 (ITO––indium tin oxide). These have been deposited onto both surfaces a glass using constant-current ion sputtering method. A negative voltage Upol electrode created internal electric field. studies were performed vacuum order 10−6 Pa. As result applying illumination photoelectrons are recorded as pulses multichannel pulse amplitude analyzer. Electron yield dependence intensity an was measured. With increasing count frequency n grows monotonically. exponential n=f(Upol) has found. phenomenological model ITO layer partition two zones depleted enhanced carriers is given explain observed effects.