Trion valley coherence in monolayer semiconductors

作者: Fengcheng Wu , Christian Schüller , Kha Tran , Galan Moody , Philipp Nagler

DOI: 10.1088/2053-1583/AA70F9

关键词: Polarization (waves)TrionQuantumCoherence (physics)Coherent spectroscopyCondensed matter physicsElectronPhysicsExcitonValleytronics

摘要: The emerging field of valleytronics aims to exploit the valley pseudospin electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation exciton coherence (the superposition electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control this quantum degree freedom. charged (trion) TMDs is intriguing alternative neutral for because its long spontaneous recombination lifetime, robust polarization, coupling residual electronic spin. Trion has however been unexplored due experimental challenges accessing it spectroscopically. In work, we employ ultrafast two-dimensional coherent spectroscopy resonantly generate detect trion MoSe2 that persists few-hundred femtoseconds. We conclude underlying mechanisms limiting are fundamentally different from those applicable coherence.

参考文章(39)
G. Wang, M. M. Glazov, C. Robert, T. Amand, X. Marie, B. Urbaszek, Double Resonant Raman Scattering and Valley Coherence Generation in Monolayer WSe 2 Physical Review Letters. ,vol. 115, pp. 117401- 117401 ,(2015) , 10.1103/PHYSREVLETT.115.117401
C.-M. Simon, T. Belhadj, B. Chatel, T. Amand, P. Renucci, A. Lemaitre, O. Krebs, P. A. Dalgarno, R. J. Warburton, X. Marie, B. Urbaszek, Robust quantum dot exciton generation via adiabatic passage with frequency-swept optical pulses. Physical Review Letters. ,vol. 106, pp. 166801- ,(2011) , 10.1103/PHYSREVLETT.106.166801
G. Wang, X. Marie, I. Gerber, T. Amand, D. Lagarde, L. Bouet, M. Vidal, A. Balocchi, B. Urbaszek, Giant Enhancement of the Optical Second-Harmonic Emission of WSe 2 Monolayers by Laser Excitation at Exciton Resonances Physical Review Letters. ,vol. 114, pp. 097403- ,(2015) , 10.1103/PHYSREVLETT.114.097403
Galan Moody, Chandriker Kavir Dass, Kai Hao, Chang-Hsiao Chen, Lain-Jong Li, Akshay Singh, Kha Tran, Genevieve Clark, Xiaodong Xu, Gunnar Berghäuser, Ermin Malic, Andreas Knorr, Xiaoqin Li, Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides Nature Communications. ,vol. 6, pp. 8315- 8315 ,(2015) , 10.1038/NCOMMS9315
Luyi Yang, Nikolai A. Sinitsyn, Weibing Chen, Jiangtan Yuan, Jing Zhang, Jun Lou, Scott A. Crooker, Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2 Nature Physics. ,vol. 11, pp. 830- 834 ,(2015) , 10.1038/NPHYS3419
Kin Fai Mak, Jie Shan, Jieun Lee, Electrical control of the valley Hall effect in bilayer MoS2 transistors. Nature Nanotechnology. ,vol. 11, pp. 421- 425 ,(2016) , 10.1038/NNANO.2015.337
C. Poellmann, P. Steinleitner, U. Leierseder, P. Nagler, G. Plechinger, M. Porer, R. Bratschitsch, C. Schüller, T. Korn, R. Huber, Resonant internal Quantum transitions and femtosecond radiative decay of excitons in monolayer WSe2 Nature Materials. ,vol. 14, pp. 889- 893 ,(2015) , 10.1038/NMAT4356
Akshay Singh, Galan Moody, Kha Tran, Marie E. Scott, Vincent Overbeck, Gunnar Berghäuser, John Schaibley, Edward J. Seifert, Dennis Pleskot, Nathaniel M. Gabor, Jiaqiang Yan, David G. Mandrus, Marten Richter, Ermin Malic, Xiaodong Xu, Xiaoqin Li, Trion formation dynamics in monolayer transition metal dichalcogenides Physical Review B. ,vol. 93, pp. 041401- ,(2016) , 10.1103/PHYSREVB.93.041401
A. Manassen, E. Cohen, Arza Ron, E. Linder, L. N. Pfeiffer, EXCITON AND TRION SPECTRAL LINE SHAPE IN THE PRESENCE OF AN ELECTRON GAS IN GAAS/ALAS QUANTUM WELLS Physical Review B. ,vol. 54, pp. 10609- 10613 ,(1996) , 10.1103/PHYSREVB.54.10609
Aaron M Jones, Hongyi Yu, Nirmal J Ghimire, Sanfeng Wu, Grant Aivazian, Jason S Ross, Bo Zhao, Jiaqiang Yan, David G Mandrus, Di Xiao, Wang Yao, Xiaodong Xu, None, Optical generation of excitonic valley coherence in monolayer WSe2. Nature Nanotechnology. ,vol. 8, pp. 634- 638 ,(2013) , 10.1038/NNANO.2013.151