Sidewall depletion in nano-patterned LAO/STO heterostructures
作者： M. Z. Minhas , H. H. Blaschek , F. Heyroth , G. Schmidt
DOI: 10.1063/1.4943401
关键词: Conductance 、 Heterojunction 、 Nanotechnology 、 Conductivity 、 Optoelectronics 、 Fermi gas 、 Dry etching 、 Nanostructure 、 Nano- 、 Etching (microfabrication) 、 Materials science
摘要: We have investigated the conductance of nanostructures fabricated from quasi-two-dimensional electron gas (q2DEG) formed at LaAlO3/ SrTiO3 (LAO/STO) interface. Measurements were done room temperature and T=4.2 K. Our findings show that fully industry compatible nano-patterning process conserves conductivity except for a small dependent sidewall depletion which we attribute to etch damage induced by dry etching process.
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