Time-resolved study of laser-induced disorder of Si surfaces.

作者: H. W. K. Tom , G. D. Aumiller , C. H. Brito-Cruz

DOI: 10.1103/PHYSREVLETT.60.1438

关键词: Condensed matter physicsElectronic structureExcited stateMolecular physicsSolid-state physicsFemtosecondMaterials scienceRelaxation (NMR)LaserExcitationPhase (matter)

摘要: Optical second-harmonic studies show that the electronic structure in top 75\char21{}130 A\r{} of a crystalline Si surface loses cubic order only 150 fsec after is excited by an intense 100-fsec optical pulse. This suggests atomic disorder can be induced directly excitation, before material becomes vibrationally excited. In contrast, properties equilibrium molten phase are not obtained for several hundreds femtoseconds.

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