Methods of modifying surfaces of structures used in the manufacture of a semiconductor device via fluorination

作者: Sungil Ahn , Cesar M. Garza

DOI:

关键词: Organic chemistryCore (manufacturing)Materials scienceInert gasFluorinePolymerSemiconductor deviceChemical engineeringRange (particle radiation)Organic polymer

摘要: Methods are disclosed for modifying surfaces of a structure used in manufacturing semiconductor devices wherein the structures formed from organic polymers. In addition to surface structure, which is over core, portion slightly below also modified via fluorination polymer. The achieved by exposing mixture gases including fluorine range about 0.01% 10% and inert gas comprising remainder gases. Fluorination occurs into core depth no more than 1 micron such that not fluorinated.

参考文章(4)
Hugh C. Crenshaw, Joshua T. Stecher, Pang-Jen Craig Kung, Kenneth I. Pettigrew, Gregory Fenton Smith, Plastic surfaces and apparatuses for reduced adsorption of solutes and methods of preparing the same ,(2006)
Keiichi Nii, Naoki Tanahashi, Tadahiro Ohmi, Method of Manufacturing a Transparent Member and Plastic Member ,(2012)
Vincent D. Mcginniss, Francis A. Sliemers, Controlled surface-fluorination process ,(1983)
Akihiro c, o Niigata Polymer Co. Ltd Hasegawa, o Niigata Polymer Co. Ltd Mimura, Hiroshi c, Substrate storage container and method for manufacturing the same ,(2006)