作者: Sungil Ahn , Cesar M. Garza
DOI:
关键词: Organic chemistry 、 Core (manufacturing) 、 Materials science 、 Inert gas 、 Fluorine 、 Polymer 、 Semiconductor device 、 Chemical engineering 、 Range (particle radiation) 、 Organic polymer
摘要: Methods are disclosed for modifying surfaces of a structure used in manufacturing semiconductor devices wherein the structures formed from organic polymers. In addition to surface structure, which is over core, portion slightly below also modified via fluorination polymer. The achieved by exposing mixture gases including fluorine range about 0.01% 10% and inert gas comprising remainder gases. Fluorination occurs into core depth no more than 1 micron such that not fluorinated.