Method of manufacturing a monolithic duplexer

作者: Seog-woo Hong , Byeoung-ju Ha , Kuang-woo Nam , In-Sang Song , Duck-Hwan Kim

DOI:

关键词: EtchingDuplexerLayer (electronics)InductorOptoelectronicsSubstrate (printing)Electrical engineeringMaterials scienceElectrodePiezoelectricityAir gap (plumbing)

摘要: A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The comprises depositing and patterning a lower electrode on an upper surface of insulation layer substrate, so as to expose first part the layer; piezoelectric exposed electrode; metal form resonance trimming inductor, wherein electrically couples inductor; air gap type FBARs (film bulk acoustic resonances) by forming cavity etching substrate under part; bonding packaging having phase shifting which substantially prevents inflow signal between FBARs.

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