Growth of silicides and interdiffusion in the Mo-Si system

摘要: Solid-solid diffusion couples assembled with disks of Mo and Si were annealed at selected temperatures, over the temperature range from 900 °C to 1350 °C, for development structure determination interdiffusion coefficients silicides Mo. Layers MoSi2 Mo5Si3 observed form in zone; layer was one two orders magnitude larger thickness than layer. The MoSo2 developed a columnar microstructure evidence texture preferential growth grains direction diffusion. Si-to-Mo ratio, determined by microprobe analysis across layer, varied within approximate 1.9 2.0. From concentration profiles, integrated as well energies activation silicide layers. On basis stoichiometric phase, average values also estimated. Relations are derived between growth-rate constant coefficient phase. evaluated phases 130±20 210±10 kJ/mol, respectively.