MECHANISMS INFLUENCING HOT-WIRE DEPOSITION OF HYDROGENATED AMORPHOUS SILICON
作者： Edith C. Molenbroek , A. H. Mahan , Alan Gallagher
DOI: 10.1063/1.365998
关键词: Substrate (electronics) 、 Hydrogen 、 Ambipolar diffusion 、 Amorphous silicon 、 Silane 、 Chemical engineering 、 Deposition (phase transition) 、 Silicon 、 Materials science 、 Nanotechnology 、 Thin film
摘要: Intrinsic hydrogenated amorphous silicon (a-Si:H) has been deposited using a hot tungsten filament in pure silane to drive the deposition chemistry—the “hot-wire” method. The electronic and infrared properties of film have measured as function parameters, leading three principal conclusions. First, obtain high quality material, Si atoms evaporated from (distance L substrate) must react with (density ns) before reaching substrate; this requires nsL greater than critical value. Second, radical-radical reactions cause deterioration at values G(nsL),3 where G is growth rate; G(nsL)3 less Finally, G, increased substrate temperature be correspondingly quality. By optimizing these we produced films excellent (e.g., ambipolar diffusi...
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