Phase changes of CrN films annealed at high temperature under controlled atmosphere

摘要: Abstract CrN films were deposited onto (100) Si wafers by cathodic arc plasma deposition. After that, the annealed between 400 and 1200°C for 2 h in air, N , /H =9, which possess dramatically different P n o . XRD results showed that oxidation of occurred above 700°C all gases but relative amount resultant oxide Cr O 3 decreased with rising ( / ) ratio a given temperature. The driving force nitride is Gibbs free energy changes reaction. Meanwhile, β-Cr phase appeared at 500°C, diminished 700°C, up again 1100°C under atmospheres. reason presence temperatures thermodynamically more stable than high temperature range, as analyzed from thermodynamics. transforming to low range possibly due large stress relaxation occurring film during annealing, observed situ measurements.