Microstructure of β-FeSi2 thin films prepared by pulsed laser deposition

摘要: Abstract Iron disilicide thin films were prepared by pulsed laser deposition (PLD) on Si (100) substrates using a FeSi2 alloy target. Droplet-free could be deposited at fluence between 2 and 4 J/cm2 193-nm laser. Polycrystalline of β-FeSi2 phase formed even substrate temperature 20°C. In addition to the phase, FeSi was observed for temperatures 400 600°C. This is attributed mobility enhancement atoms. At 700°C, disappeared single-phase having columnar structure grown due both Fe less than 600°C, lattices distorted. higher lattice constants approached bulk values. The more 700°C epitaxially Si(100) with relation (041) or (014) ∣∣ (220) beginning deposition. As film thickness increases, epitaxial growth becomes disordered finally non-oriented near surface. For all various temperatures, stoichiometry constant in depth direction. Thus, it suggested that atoms from hardly diffused into film. generation iron PLD mechanism also discussed.